Infineon FZ1200R33KF2C
Brand:
Other Hot-sellingsPayment:
T/TProduct Origin:
GermanyLead Time:
IN STOCKManufacturer:
InfineonPart number:
FZ1200R33KF2CDimension:
5.1x9.2x20.3cmWeight:
0.2kgHS CODE:
8537101190Warranty:
12 month
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The Infineon FZ1200R33KF2C is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for demanding industrial and energy applications. Manufactured in Germany, this module is built to handle extreme currents and voltages with high efficiency and reliability.
It features a maximum collector-emitter voltage of 3.3 kV and can continuously conduct up to 2 kA at 25 °C, making it suitable for heavy-duty DC and AC power control. The module has a collector-emitter saturation voltage of 3.4 V and a gate-emitter leakage current of 400 nA, ensuring precise switching with minimal losses. Power dissipation reaches 14.5 kW, allowing efficient thermal management in high-power applications.
The FZ1200R33KF2C comes in an IS5a (62 mm) package with screw-mount installation for secure and robust mounting. It operates across a wide temperature range from -40 °C to +125 °C and supports a maximum gate-emitter voltage of 20 V, ensuring stability under varying operating conditions.
Manufacturer: Infineon
Product Numbers: FZ1200R33KF2C
Product Type: IGBT Module
Place of 0rigin: Germany
Collector- Emitter Voltage VCEO Max: 3.3 kV
Collector-Emitter Saturation Voltage: 3.4 V
Continuous Collector Current at 25 C: 2 kA
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 14.5 kW
Package/Case: IS5a ( 62 mm )-9
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Screw Mount
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